Pii: S0026-2692(99)00081-6
نویسندگان
چکیده
Time-dependent buckling phenomena of polysilicon micro beams have been demonstrated and reported. These beams are suspended 2 mm above the silicon substrate with dimensions of 100 mm (length) × 2 mm (width) × 2 mm (thickness). When a constant input current is supplied at or above a threshold value, electro-thermally induced buckling occurs. It is observed and recorded that the beams exhibit timedependent elongation. Three types of time-dependent material behaviors have been identified, including pure elastic buckling, time-dependent elastoplastic deformation and the combination of melting and irreversible plastic damage. q 1999 Elsevier Science Ltd. All rights reserved.
منابع مشابه
Pii: S0026-2692(00)00075-6
This paper presents a real case study on the testing of 8-bit mixed-signal CMOS micro-controller devices by applying the IDDQ testing methodology. The aim of the study is to evaluate the feasibility of using the IDDQ test to enhance the overall fault coverage. Failure analysis operated on the failed sample indicated a good correlation between the fault coverage and the parts that failed the IDD...
متن کاملPii: S0026-2692(99)00150-0
A simple relaxation oscillator is designed by directly coupling a RC timing network to a passive S-shaped current-controlled nonlinear resistor and is then modified for chaos. The resulting chaotic oscillator inherits the main features of the relaxation oscillator, which are its low-power consumption and low-voltage operation from single or dual power supplies. These features are attributed to ...
متن کاملPii: S0026-2692(00)00023-9
In this paper we analyse the trade-offs for a terahertz imaging system and discuss implementation of a terahertz micro antenna array for imaging. We also describe applications of terahertz imaging and improvements in the signal processing. q 2000 Elsevier Science Ltd. All rights reserved.
متن کاملControllable growth of semiconductor nanometer structures
Self-assembled quantum dots and wires were obtained in the InxGa1-xAs/GaAs and InAs/In0.52Al0.48As/InP systems, respectively, using molecular beam epitaxy (MBE). Uniformity in the distribution, density, and spatial ordering of the nanostructures can be controlled to some extent by adjusting and optimizing the MBE growth parameters. In addition, some interesting observation on the InAs wire alig...
متن کامل